| 摘要 |
Disclosed here is a nonvolatile semiconductor memory device used to prevent data loss that might occur in unselected memory cells due to a disturbance that might occur during programming/erasing in/from those memory cells. In the nonvolatile semiconductor memory device, the number of programming/erasing operations performed in a data storage block over a programming/erasing unit of the subject nonvolatile memory is recorded in an erasing/programming counter EW CT provided in each data storage block. When the value of the erasing/programming counter reaches a predetermined value, the data storage block corresponding to the erasing/programming counter is refreshed. In the refreshing operation, the data in the data storage block is stored in a temporary storing region provided in the data storage block, then the data in a temporary storing region of the data storage area is erased and the data stored temporarily is programmed in the data storage block again.
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