ELECTROLUMINESCENCE DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent a short circuit and disconnection based on melting out of a barrier metal in a thin film transistor of an electroluminescence display device. SOLUTION: The barrier metals 110 and 111 formed of titanium nitride in which titanium or nitrogen content becomes 50 atm% or below are arranged between a silicon active layer 102 constituting a source region 105 or a drain region 107 of the thin film transistor and aluminum wirings 113 and 114 connected to the silicon active layer 102. The thin film transistor of a pixel part and a thin film transistor of a peripheral driving circuit are simultaneously formed on a substrate. COPYRIGHT: (C)2005,JPO&NCIPI