发明名称 EMI-EMC shield for silicon-based optical transceiver
摘要 An SOI-based opto-electronic structure includes various electronic components disposed with their associated optical components within a single SOI layer, forming a monolithic arrangement. EMI/EMC shielding is provided by forming a metallized outer layer on the surface of an external prism coupler that interfaces with the SOI layer, the metallized layer including transparent apertures to allow an optical signal to be coupled into and out of the SOI layer. The opposing surface of the prism coupler may also be coated with a metallic material to provide additional shielding. Further, metallic shielding plates may be formed on the SOI structure itself, overlying the locations of EMI-sensitive electronics. All of these metallic layers are ultimately coupled to an external ground plane to isolate the structure and provide the necessary shielding.
申请公布号 US2005135727(A1) 申请公布日期 2005.06.23
申请号 US20040013722 申请日期 2004.12.16
申请人 SIOPTICAL, INC. 发明人 PIEDE DAVID;GHIRON MARGARET;GOTHOSKAR PRAKASH;MONTGOMERY ROBERT K.;PATEL VIPULKUMAR;SHASTRI KALPENDU;PATHAK SOHAM;YANUSHEFSKI KATHERINE A.
分类号 G02B6/42;(IPC1-7):G02B6/12 主分类号 G02B6/42
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