发明名称 |
Metal interconnection structure of semiconductor device and method of forming the same |
摘要 |
Provided is a metal interconnection structure of a semiconductor device, having: a lower metal layer disposed on an insulating layer formed on a semiconductor device; a contact plug disposed on the lower metal layer; a supporting layer disposed to surround the contact plug; an upper metal layer disposed on the contact plug and the supporting layer; and an air layer interposed between the lower and upper metal layers to insulate the lower metal layer from the upper metal layer.
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申请公布号 |
US2005136651(A1) |
申请公布日期 |
2005.06.23 |
申请号 |
US20040019267 |
申请日期 |
2004.12.23 |
申请人 |
DONGBUANAM SEMICONDUCTOR, INC. |
发明人 |
KIM SANG K. |
分类号 |
H01L21/28;H01L21/4763;H01L21/768;H01L23/48;H01L23/522;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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