发明名称 |
Catalytic CVD equipment, method for catalytic CVD, and method for manufacturing semiconductor device |
摘要 |
A catalytic CVD equipment comprises: a vacuum chamber; a stage; a first catalyzer; and a second catalyzer. The stage holds a substrate in the vacuum chamber. The first catalyzer is provided in the vacuum chamber and has a bar member arranged substantially in parallel to a major surface of the substrate. The second catalyzer is provided in the vacuum chamber, and has a bar member arranged at a tilted angle to the major surface of the substrate. A thin film is deposited on the substrate held on the stage by introducing a source gas, by heating the first and the second catalyzer, and by decomposing the gas in the vacuum chamber under a low pressure.
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申请公布号 |
US2005132961(A1) |
申请公布日期 |
2005.06.23 |
申请号 |
US20040012243 |
申请日期 |
2004.12.16 |
申请人 |
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. |
发明人 |
SAITO TSUYOSHI |
分类号 |
C23C16/452;C23C16/04;C23C16/34;C23C16/44;H01L21/31;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/452 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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