ELECTRODE, METHOD FOR PRODUCING SAME AND SEMICONDUCTOR DEVICE USING SAME

摘要

Disclosed is a technology for obtaining an electrode which has a low contact resistance and less surface roughness. Specifically disclosed is an electrode formed on top of a semiconductor film (101) which is characterized in that the electrode comprises a first metal layer (102) and a second metal layer (103) sequentially formed on top of the semiconductor film (101) in this order, and the first metal layer (102) is composed of Al while the second metal film (103) is composed of one or more metals selected from the group consisting of Nb, W, Fe, Hf, Re, Ta and Zr.