| 发明名称 |
A METHOD OF RAPIDLY THERMALLY ANNEALING MULTILAYER WAFERS WITH AN EDGE |
| 摘要 |
The invention provides a method of thermally treating a multilayer wafer (10) with an edge, the wafer being made of materials selected from semiconductive materials and the method being characterized in that during annealing heating is adapted locally and selectively at the edge to take account of the local difference in heat absorption by the edge. |
| 申请公布号 |
KR20050062653(A) |
申请公布日期 |
2005.06.23 |
| 申请号 |
KR20057008087 |
申请日期 |
2005.05.06 |
| 申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
NEYRET ERIC;MALLEVILLE CHRISTOPHE |
| 分类号 |
H01L21/00;H01L21/324;H01L21/762 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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