发明名称 SYSTEM AND METHOD FOR DRY ETCHING
摘要 PROBLEM TO BE SOLVED: To perform dry etching so that desired etching types can be obtained without causing any etching stop regardless of a material of an object to be etched. SOLUTION: On a lower electrode 102 in a reaction chamber 101, a substrate 150 to be treated is arranged and a focus ring 107 is arranged in such a manner as to surround the substrate to be treated. The focus ring 107 has a surface area in accordance with the quantity of carbon atoms generated by the object to be etched during etching. In concrete, the focus ring 107 is constituted by the combination of one or more rings selected from a plurality of rings that are prepared and have different radii (three rings 107a to 107c). COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005167088(A) 申请公布日期 2005.06.23
申请号 JP20030406378 申请日期 2003.12.04
申请人 MATSUSHITA ELECTRIC IND CO LTD;RENESAS TECHNOLOGY CORP 发明人 YAMANAKA MICHINARI;SAKAMORI SHIGENORI
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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