| 摘要 |
PROBLEM TO BE SOLVED: To improve an element lifetime and a production yield of a GaInNAs series semiconductor laser. SOLUTION: A GaAs intermediate layer (layer thickness 2 nm) 12 is inserted between a Ga<SB>0.6</SB>In<SB>0.4</SB>N<SB>0.005</SB>As<SB>0.995</SB>well layer 13 (layer thickness 5 nm) and a GaN<SB>0.01</SB>As<SB>0.99</SB>stress compensation layer (layer thickness 5 nm) 11, whereby a difference in an amount of distortion at a hetero interface is reduced, to manufacture a distortion compensation quantum well active layer 4 having an excellent hetero interface. As the material of the intermediate layer, GaAs, GaAsSb and GaInAs are preferable. If the amount of distortion of the intermediate layer is so large, this is counter to a stress compensation. Therefore, a range of 0 to 0.5% is preferable. If the thickness of the intermediate layer is so thin, an effect of insertion disappears. On the contrary, even if the thickness is excessive, an effect of compensation is reduced. Therefore, an optimum range exists. The thickness of the intermediate layer is 0.5 to 2.5 nm, preferably. COPYRIGHT: (C)2005,JPO&NCIPI
|
