发明名称 Method and system for forming a contact in a thin-film device
摘要 An aspect of the present invention is a method of forming a contact in a thin-film device. The method includes forming a liftoff stencil, depositing at least one material through the liftoff stencil, removing a portion of the liftoff stencil, depositing a dielectric material, planarizing the dielectric material thereby exposing a portion of the at least one material and depositing a conductor material in contact with the exposed portion of the at least one material.
申请公布号 US2005136648(A1) 申请公布日期 2005.06.23
申请号 US20030745723 申请日期 2003.12.23
申请人 SHARMA MARIAH;ANTHONY THOMAS C.;LEE HEON 发明人 SHARMA MARIAH;ANTHONY THOMAS C.;LEE HEON
分类号 H01L21/336;H01L21/44;H01L21/4763;H01L21/48;H01L21/50;H01L43/12;(IPC1-7):H01L21/476 主分类号 H01L21/336
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