Method for manufacturing a metal oxide transistor having reduced 1/f noise

摘要

The present invention provides, in one embodiment, a method of reducing 1/f noise in a metal oxide semiconductor (MOS) device ( 100 ). The method comprises forming an oxide layer ( 110 ) on a silicon substrate ( 105 ) and depositing a polysilicon layer ( 115 ) on the oxide layer ( 110 ). The method further includes implanting a fluorine dopant ( 130 ) into the polysilicon layer ( 115 ) at an implant dose of at least about 4x10¹⁴ atoms/cm². The polysilicon layer ( 115 ) is thermally annealed such that a portion of the fluorine dopant ( 130 ) is diffused into the oxide layer ( 110 ) to thereby reduce a 1/f noise of the MOS device ( 100 ). Other embodiments of the provide a MOS device ( 300 ) manufactured by the above-described method and a method of manufacturing an integrated circuit ( 500 ) that includes the above-described method.