发明名称 |
Patterned microelectronic mask layer formation method employing multiple feed-forward linewidth measurement |
摘要 |
A method for forming a patterned mask layer within a microelectronic product employs a sequential linewidth measurement and trimming of a patterned mask layer to form multiply trimmed patterned mask layer. The sequential linewidth measurement and trimming employs at least two linewidth measurements and two patterned mask layer trimmings to provide a multiply trimmed patterned mask layer having an actual linewidth intended to be near a pre-determined target linewidth.
|
申请公布号 |
US2005136335(A1) |
申请公布日期 |
2005.06.23 |
申请号 |
US20030738240 |
申请日期 |
2003.12.17 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN RYAN CHIA-JEN;CHEN FANG-CHENG;CHEN LI-SHIUN |
分类号 |
G03C5/00;G03F7/40;G03F9/00;H01L21/033;(IPC1-7):G03F9/00 |
主分类号 |
G03C5/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|