发明名称 |
THE PRODUCTION OF A GERMANIUM OXYNITRIDE LAYER ON A GE-BASED MATERIAL |
摘要 |
A method for producing thin, below 6nm of equivalent oxide thickness, germanium oxynitride layer on Ge-based materials for use as gate dielectric is disclosed. The method involves a two step process. First, nitrogen is incorporated in a surface layer of the Ge-based material. Second, the nitrogen incorporation is followed by an oxidation step. The method yields excellent thickness control of high quality gate dielectrics for Ge-based field effect devices, such as MOS transistors. Structures of devices having the thin germanium oxynitride gate dielectric and processors made with such devices are disclosed, as well. |
申请公布号 |
WO2005031809(A3) |
申请公布日期 |
2005.06.23 |
申请号 |
WO2004EP52283 |
申请日期 |
2004.09.23 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;GOUSEV, EVGENI;SHANG, HUILING;D'EMIC, CHRISTOPHER;KOZLOWSKI, PAUL |
发明人 |
GOUSEV, EVGENI;SHANG, HUILING;D'EMIC, CHRISTOPHER;KOZLOWSKI, PAUL |
分类号 |
H01L21/28;H01L21/314;H01L21/316;H01L21/318;H01L29/51 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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