DRAM CELL EMPLOYING AN ASYMMETRICAL BURIED INSULATING LAYER AND METHOD OF FABRICATING THE SAME,申请号KR20030093437-传众专利搜索

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发明名称	DRAM CELL EMPLOYING AN ASYMMETRICAL BURIED INSULATING LAYER AND METHOD OF FABRICATING THE SAME
摘要
申请公布号	KR20050061883(A)	申请公布日期	2005.06.23
申请号	KR20030093437	申请日期	2003.12.18
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	OH, CHANG WOO;PARK, DONG GUN;CHOE, JEONG DONG;YEO, KYOUNG HWAN
分类号	H01L27/108;H01L21/336;H01L21/8238;H01L21/8242;H01L29/00;H01L29/06;(IPC1-7):H01L27/108	主分类号	H01L27/108
代理机构		代理人
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