SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having an excellent characteristic and reliability.

SOLUTION: The semiconductor device comprises a base insulating film 102 having a recess 120; a first semiconductor section 103a including a part formed on the base insulating film and a first overlap part overlapped with the recess; a second semiconductor section 103b including a part formed on the base insulating film and a second overlap part overlapped with the recess and opposed to the first overlap part; and a third semiconductor section 103c positioned between the first and second semiconductor sections and including a part located above the recess. The semiconductor device also comprises a semiconductor structure 103 having the width of the overlap of the first overlap part equal to that of the second overlap part; a gate electrode 116 including a first electrode section for covering the upper and side surfaces of the third semiconductor section and a second electrode section formed within the recess; and a gate insulating film disposed between the semiconductor structure and the gate electrode.

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