| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a good characteristic, such as characteristic of material, where crystals of excellent quality can be uniformly grown on a large substrate whose lattice is irregular. <P>SOLUTION: The semiconductor device is deposited on the substrate having a surface orientation of an angle of 0.05°or more different from a (0001) surface of GaN or AlN. Especially, in the case of Gan, the light emitting efficiency is abruptly improved at an off-angle of 0.5° or more. Its temperature characteristic can be improved by using the AlN substrate having almost 5 times as large heat transfer rate as sapphire. Moreover, locating a quantum well structure between the substrate and the light emitting layer allows preventing a transition from spreading to an active layer, thereby, the characteristic can be improved. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
