SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a high-speed and nonvolatile random access memory which is operated at low voltage. SOLUTION: The gate voltage of a transistor QM for memory cell selection is controlled for a MISFET, a voltage in an intermediate state is applied for attaining a low resistance state, and thus the maximum current amount to be impressed to a sample is limited. COPYRIGHT: (C)2005,JPO&NCIPI