发明名称 TRAY FOR VAPOR PHASE PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a tray for a vapor phase process where electrostatic chuck is possible and plasma-proof property etc. are excellent. SOLUTION: The tray for the vapor phase process for electrostatic chuck is stuck to a semiconductor board with an inorganic consecutive stomatal sintered body whose thickness is 0.05 to 1 mm and whose open porosity is 5 to 50% as a protection board. It is possible to provide the tray for a vapor phase process where a conventional electrostatic chuck function can be used without improving substantially and which uses chlorine-proof plasma etc. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005166986(A) 申请公布日期 2005.06.23
申请号 JP20030404206 申请日期 2003.12.03
申请人 MITSUBISHI GAS CHEM CO INC 发明人 OYA KAZUYUKI;OWADA HISASHI;SAYAMA NORIO
分类号 C23C16/458;H01L21/205;H01L21/3065;H01L21/68;H01L21/683;(IPC1-7):H01L21/68;H01L21/306 主分类号 C23C16/458
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