NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To achieve a reliable and efficient nitride semiconductor element by oscillating continuously for a long period of time at a room temperature by reducing the threshold of a laser element mainly made of a nitride semiconductor. SOLUTION: A first n-type nitride semiconductor layer in which n-type dopant is doped, or a metal layer made of n-type dopant is formed in contact with an active layer made of the nitride semiconductor containing indium. A second n-type nitride semiconductor layer in which the n-type dopant is doped in a smaller quantity than that of the first n-type nitride semiconductor layer is formed at a position separated from the active layer as compared with the first n-type nitride semiconductor layer. COPYRIGHT: (C)2005,JPO&NCIPI