| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device composed of a nitride semiconductor including at least one of Al, Ga, and In capable of reducing the dislocation density in an epitaxial-grown semiconductor layer and of being used as a practical device such as FET or HEMT. SOLUTION: An AlN layer whose dislocation density is 10<SP>11</SP>/cm<SP>2</SP>or less and whose half value width in the X-ray rocking curve in (002) plane is 90 sec or less is epitaxial-grown on a substrate 1 as a backing layer 2 and an n-GaN layer is epitaxial-grown on the backing layer 2 as a conductive layer 3, then the dislocation density in the conductive layer 3 is made equal to or less than 10<SP>10</SP>/cm<SP>2</SP>and the half value width in the X-ray rocking curve in (002) plane is made equal to or less than 150 sec. At this time, a misfit dislocation that occurs at the boundary surface between the substrate 1 and the backing layer 2 does not propagate into the backing layer 2 because it twines at the boundary surface. COPYRIGHT: (C)2005,JPO&NCIPI
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