| 发明名称 |
Vertical gate semiconductor device and method for fabricating the same |
| 摘要 |
A first region 11 functioning as a transistor includes a drain region 111 , a body region 112 formed over the drain region 111 , a source region 113 A formed over the body region 112 and a trench formed through the body region 112 and having a gate electrode 120 buried therein. A source region 113 B is formed over the body region 112 extending in a second region 12.
|
| 申请公布号 |
US2005133861(A1) |
申请公布日期 |
2005.06.23 |
| 申请号 |
US20040962573 |
申请日期 |
2004.10.13 |
| 申请人 |
MATSUSHITA ELECRIC INDUSTRIAL CO., LTD. |
发明人 |
MIZOKUCHI SHUJI;YAMANAKA MITSUHIRO;GUNJI HIROYUKI |
| 分类号 |
H01L21/331;H01L21/336;H01L21/8234;H01L29/06;H01L29/08;H01L29/10;H01L29/417;H01L29/739;H01L29/78;(IPC1-7):H01L21/823;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/331 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
