| 摘要 |
A film-formation method for a semiconductor process includes pre-coating of covering a worktable with a pre-coat before loading a target substrate into a process chamber, and film formation thereafter of loading the target substrate into the process chamber, and forming a main film on the target substrate. The pre-coating repeats the first and second steps a plurality of times, thereby laminating segment films to form the pre-coat. The first step supplies first and second process gases into the process chamber, thereby forming a segment film containing a metal element on the worktable. The second step supplies the second process gas containing no metal element into the process chamber, thereby exhausting and removing, from the process chamber, a byproduct produced in the first step other than a component forming the segment film.
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