NAND MEMORY ARRAY INCORPORATING MULTIPLE SERIES SELECTION DEVICES AND METHOD FOR OPERATION OF SAME

摘要

An exemplary NAND string memory array provides for capacitive boosting of a half-selected memory cell channel to reduce program disturb effects of the half selected cell. To reduce the effect of leakage current degradation of the boosted level, multiple series select devices at one or both ends of each NAND string reduce leakage through such select devices, for both unselected and selected NAND strings. An exemplary memory array may include series-connected NAND strings of memory cell transistors having a charge storage dielectric, and includes more than one plane of memory cells formed above a substrate.