发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing metallic wires or metallic electrodes in which the generation of sidewall attachments (burrs) to be generated by a lift-off method adopting dipping in a peeling solution is suppressed in the case of forming the metallic wires or the metallic electrodes in a semiconductor device. SOLUTION: Metallic films are deposited on the pattern of a photoresist 103, the photoresist 103 and the metallic films 104, 105 are instantaneously cooled by blowing out carbon dioxide gas particulates 107. Because of sharp differences in the thermal expansion coefficients of the photoresist 103 and the metallic films 104, 105, the metallic films 105, which may cause the generation of burrs, stuck to the sidewalls of the photoresist 103 can be easily cut off from the metallic films 104, and metallic electrodes or metallic wires free from burrs can be obtained. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005166972(A) 申请公布日期 2005.06.23
申请号 JP20030404040 申请日期 2003.12.03
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KITAZAWA TAKAHIRO
分类号 H01L21/28;H01L21/302;H01L21/3205;H01L23/52;(IPC1-7):H01L21/320 主分类号 H01L21/28
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