| 摘要 |
PROBLEM TO BE SOLVED: To reduce emitter resistance and base resistance without change in impurity profile just under the emitter. SOLUTION: The emitter electrode and base electrode including crystal structure formed on a semiconductor substrate are converted into the amorphous electrodes by ion implantation to these electrodes. Thereafter, these are grown in the solid phase through the heat treatment. In this case, the incident angle of ion implantation is required to satisfy the following formula when the vertical direction is defined as the reference direction for the semiconductor substrate.θ≥π/2-tan<SP>-1</SP>(T/W) where,θ:Incident angle (radian), T: Thickness of insulating film under the emitter electrode, and W: emitter contact width. COPYRIGHT: (C)2005,JPO&NCIPI
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