发明名称 SEMICONDUCTOR CIRCUIT, ITS MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent a TFT from being electrostatically damaged in the signal line drive circuit of a liquid crystal display panel. SOLUTION: In a semiconductor circuit, the gate electrode of the second TFT 52 having the semiconductor layer 52a provided on a glass substrate is connected to the second separated wiring 48 for constituting second gate wiring. The second separated wiring 48 is electrically isolated from the first separated wiring 46 for constituting the second gate wiring. The semiconductor layer 52a of the second TFT 52, the first separated wiring 46, and the second separated wiring 48 are covered with an interlayer insulating film. The source region and the drain region in the semiconductor layer 52a are respectively electrically connected to the power source supply line 43 and output wiring 44 formed on the interlayer insulating film. The second separated wiring 48 has a length from the semiconductor layer 52a becoming 150-300μm. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005166763(A) 申请公布日期 2005.06.23
申请号 JP20030400838 申请日期 2003.11.28
申请人 SHARP CORP 发明人 ISHIGURO KENICHI;GYOTEN SEIJIRO
分类号 H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L29/786
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