| 发明名称 |
Body contact formation in partially depleted silicon on insulator device |
| 摘要 |
An SOI device ( 100 ) has a gate electrode with one or more additional gate regions ( 120 ), and oxygen or halogen ions ( 128 ) under the additional gate regions ( 120 ). The oxygen or halogen ions ( 128 ) form thicker gate oxide regions or shallow trench isolation regions.
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| 申请公布号 |
US2005133831(A1) |
申请公布日期 |
2005.06.23 |
| 申请号 |
US20030743985 |
申请日期 |
2003.12.22 |
| 申请人 |
CHENG SHUI-MING;FUNG KA-HING;WANG YIN-PIN |
发明人 |
CHENG SHUI-MING;FUNG KA-HING;WANG YIN-PIN |
| 分类号 |
H01L21/336;H01L21/762;H01L21/84;H01L27/12;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L29/76;H01L31/062;H01L27/01;H01L31/039;H01L21/425 |
主分类号 |
H01L21/336 |
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