| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size of a high-withstand voltage insulated gate field effect semiconductor device that has a high withstand voltage and a high current driving capacity so that the device may be manufactured easily. SOLUTION: In the semiconductor device, a second drain region 3 is formed with a low concentration having a deep diffusion length to a first drain region 5 and, at the same time, a punch through preventing area 2 of a low concentration having a diffusion length shallower than that of the second drain region 3 is provided in a channel forming region. The punch through preventing region effectively reduces the extension of diffusion in the lateral direction in a drain region for high withstand voltage as compared with the extension of the diffusion in the depthwise direction. COPYRIGHT: (C)2005,JPO&NCIPI
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