| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS transistor for applying a self-alignment contact process while reducing the sheet resistance and contact resistance of source/drain regions. SOLUTION: Partial conductive stopper films 8F, 8G made of a WSix film are formed at a region in which it is predicted that a displacement in overlapping of a contact hole 16 occurs on a field oxide film 2 and an LDD sidewall 6 both made of silicon oxide, and a TiSix film 11 is formed on the surface of the source/drain regions 7 at the middle of the stopper films 8F, 8G for reducing sheet resistance. Even if the bottom surface of the contact hole 16 is hung on the field oxide film 2 and the LDD sidewall 6, no holes are open in the insulating films by the stopper films 8F, 8G, and the stopper films 8F, 8G function as source/drain retrieve electrodes, thus reducing contact resistance. COPYRIGHT: (C)2005,JPO&NCIPI
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