| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor laser element having a ridge stripe structure in which a semiconductor laser element having low threshold current and working current and exhibiting high differentielle Quantenwirkungsgrad is obtained by removing only an unnecessary n-type AlInP current constriction layer being formed on the ridge stripe structure upper layer selectively through etching without overetching an n-type AlInP current constriction layer being formed on the side face of the ridge stripe structure in the longitudinal direction. SOLUTION: A resist film 16 is formed such that only a unnecessary n-type AlInP current constriction layer 15b on the ridge stripe structure upper layer is exposed to the outside, and the n-type AlInP current constriction layer 15b is removed by isotropic etching liquid (preferably, mixture liquid containing saturation bromine water and phosphoric acid) and etching liquid (preferably, phosphoric acid) not etching the top 14a of the ridge stripe structure before the resist film 16 is removed. COPYRIGHT: (C)2005,JPO&NCIPI
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