| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching device provided with a gas blowout plate for uniforming the flow rate of a reaction gas supplied to a wafer by preventing the adhesion of a reaction product to a blowout hole, and reducing exchange frequency. SOLUTION: The gas blowout plate 21 used for the dry etching device comprises carbon of 3-20 mm of a thickness t, and is provided with a great number of the blowout holes 22 on the whole face. The blowout hole 22 is composed of a large hole 23 provided at the introduction side of the reaction gas, and a small hole 24 provided at a jetting side. The hole diameter d1 of the large hole 23 is 0.6-6.0 mm, and the hole diameter d2 of the small hole 24 is 0.3-3.0 mm. The hole diameter d1 of the large hole 23 is two times or larger than the hole diameter d2 of the small hole 24. Control such as the flow rate and pressure of the reaction gas is facilitated by making the hole diameters d1 and d2 of the large hole 23 and the small hole 24 in this range, and the reaction gas of the stable flow rate can be supplied. The depth t1 of the large hole 23 is formed shallower than the depth t2 of the small hole 24, and the depth t1 of a desirable large hole 23 is 0.5-1.0 mm. COPYRIGHT: (C)2005,JPO&NCIPI
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