发明名称 METHOD OF MANUFACTURING LAMINATE AND METHOD OF MANUFACTURING ORGANIC FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a laminate which enables the formation of an organic semiconductor thin film having a high carrier mobility by a simple method and to provide a method of manufacturing an organic FET. SOLUTION: The method of manufacturing the laminate comprises processes of preparing a substrate in a curved state, forming a thin film made of an organic semiconductor on the convex-side surface of the curved substrate, and making the substrate formed with the thin film into a planar form. By this manufacturing method, the thin film made of the organic semiconductor comes to have a force to be compressed in the film surface direction. Consequently, in the case that the thin film is formed of, for example, a polycrystal of the organic semiconductor, the thin film comes to have a force in a direction of narrowing a distance among particles of the polycrystal. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005166742(A) 申请公布日期 2005.06.23
申请号 JP20030400235 申请日期 2003.11.28
申请人 TDK CORP 发明人 MASUDA YUKI
分类号 H01L21/20;H01L21/336;H01L29/786;H01L51/00;H01L51/05;H01L51/40;(IPC1-7):H01L51/00 主分类号 H01L21/20
代理机构 代理人
主权项
地址