发明名称 |
Semiconductor device having two different operation modes employing an asymmetrical buried insulating layer and method for fabricating the same |
摘要 |
According to some embodiments, a semiconductor device includes a lower semiconductor substrate, an upper silicon pattern, and a MOS transistor. The MOS transistor includes a body region formed within the upper silicon pattern and source/drain regions separated by the body region. A buried insulating layer is interposed between the lower semiconductor substrate and the upper silicon pattern. A through plug penetrates the buried insulating layer and electrically connects the body region with the lower semiconductor substrate, the through plug positioned closer to one of the source/drain regions than the other source/drain region. At least some portion of the upper surface of the through plug is positioned outside a depletion layer when a source voltage is applied to the one of the source/drain regions, and the upper surface of the through plug is positioned inside the depletion layer when a drain voltage is applied to the one region.
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申请公布号 |
US2005133789(A1) |
申请公布日期 |
2005.06.23 |
申请号 |
US20040011911 |
申请日期 |
2004.12.13 |
申请人 |
OH CHANG-WOO;PARK DONG-GUN;LEE SUNG-YOUNG;CHOE JEONG-DONG |
发明人 |
OH CHANG-WOO;PARK DONG-GUN;LEE SUNG-YOUNG;CHOE JEONG-DONG |
分类号 |
H01L21/76;H01L21/336;H01L21/762;H01L21/8242;H01L27/02;H01L27/108;H01L29/76;H01L29/78;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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