发明名称 SEMICONDUCTOR CHIP, ITS MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor chip which has high connection reliability for a wiring board and other semiconductor chip, and to provide its manufacturing method. <P>SOLUTION: The semiconductor chip 1 includes a semiconductor substrate 2, and a functional element 3 is formed on the surface of the semiconductor substrate 2. A through hole 4 which penetrates the semiconductor substrate 2 along the thickness direction is formed by the functional element 3. In the through holes 4, a penetration electrode 10 is buried which is electrically connected to the functional element 3 through a wiring member 11. In the through hole 4, an antioxidative film 8 formed of gold and palladium between the penetration electrode 10 and semiconductor substrate 2. On the reverse surface of the semiconductor substrate 2, a reverse-surface side projection electrode 15 is formed which is connected to the penetration electrode 10 and projects from the reverse surface of the semiconductor substrate 2. The reverse-surface side projection electrode 15 is covered with the antioxidative film 8. A tip side of the reverse-surface side projection electrode 15 is a low-fusion-point metal layer 19. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005167093(A) 申请公布日期 2005.06.23
申请号 JP20030406446 申请日期 2003.12.04
申请人 ROHM CO LTD;SANYO ELECTRIC CO LTD;TOSHIBA CORP;RENESAS TECHNOLOGY CORP 发明人 TANIDA KAZUMA;UMEMOTO MITSUO;NEMOTO YOSHIHIKO;TAKAHASHI KENJI
分类号 H01L23/52;H01L21/28;H01L21/3205;H01L21/44;H01L21/46;H01L21/60;H01L21/768;H01L23/12;H01L23/48;H01L23/544;H01L25/00;H01L25/065 主分类号 H01L23/52
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