发明名称 WIRING STRUCTURE, METHOD OF FORMING THE SAME THIN FILM TRANSISTOR, METHOD OF FORMING THE SAME AND DISPLAY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a wiring structure which can finely wire even if the body of the wiring structure contains a copper as a main component, which has a low specific resistance, which is hard to diffuse the copper in the periphery, and which has a high adhesion strength to a substrate. SOLUTION: The wiring structure includes a seed layer 30 formed of a metal material obtained by mixing a metal for forming a metal oxide with the copper as the main component and provided on the surface 70a to be treated of the substrate 70, a barrier layer 32 formed by oxidizing the metal for forming the metal oxide contained in the metal material and provided between the substrate 70 and the seed layer 30, and a copper wiring layer 33 provided on the sheet layer 30. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005166757(A) 申请公布日期 2005.06.23
申请号 JP20030400597 申请日期 2003.11.28
申请人 ADVANCED LCD TECHNOLOGIES DEVELOPMENT CENTER CO LTD 发明人 NAKAMURA HIROYOSHI
分类号 G02F1/1368;H01L21/28;H01L21/288;H01L21/3205;H01L23/52;H01L29/423;H01L29/49;H01L29/786;(IPC1-7):H01L21/320;G02F1/136 主分类号 G02F1/1368
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