ELECTROSTATIC CHUCK FOR HOLDING WAFER AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide an electrostatic chuck for holding wafer which can prevent breakdown of the wafer and generation of particle from the flaw at the rear surface because of fluctuation in attracting force due to fluctuation of volume resistivity in the chuck resulting from temperature change and temperature gradient in accordance with the processing condition of wafer as an object of holding. SOLUTION: The wafer holding electrostatic chuck comprises an aluminum nitride system dielectric layer having a wafer placing surface and a ceramic system base material to be joined to the rear surface of the above dielectric layer via a metallic electrode. In this wafer holding electrostatic chuck, a room temperature volume resistivity of the aluminum nitride system dielectric layer is different as it goes to the circumference from the center thereof. COPYRIGHT: (C)2005,JPO&NCIPI