| 摘要 |
Defects on a wafer ( 26 ) can be detected using bright-field and/or dark-field illumination. The radiation incident onto the wafer ( 26 ) has, in this context, a substantial influence on the reliability of the measurement results. To improve the reliability of the measurement results, the wafer ( 26 ) is illuminated with an illumination device ( 12 ), adjustment of the illumination device ( 12 ), in particular its brightness and frequency, being accomplished in consideration of read-out stored illumination setpoints. These illumination setpoints are determined by way of a previous reference measurement.
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