| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently and preferably form a thin film, having a multilevel structure, in a single process. <P>SOLUTION: A mask 1 for photolithography is disclosed which is provided with a light shielding portion 3, a semi-transmitting portion 4 and a transmitting portion 5, wherein the mask has a plurality of semi-transmitting portions 4 and transmitting portions 5, and the phase difference in the light-transmitting the semi-transmitting portion 4 and the transmitting portion 5, adjacent to each other, is arbitrarily determined, to thereby form a thin film pattern, having steps for the number of pieces which is equal to or larger than the number of the plurality of semi-transmitting portions 4 and the transmitting portions 5. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
