| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device with high reliability and a method for manufacturing the same. <P>SOLUTION: A first semiconductor device in the present invention comprises, as shown in Fig.(b), a die pad 1, a major chip 2, a minor chip 3, a conductive film 7 formed on the backside of the minor chip 3, bumps 4, leads 5, and boding wires 6. The conductive film 7 is connected to an external member via the bonding wires 6 and the leads 5. Thus, the potential of a substrate is stabilized. Further, the conductive film 7 has high thermal conductivity and low electric resistance, the heat radiation performance in the semiconductor device is improved and the emission of radiation noise is suppressed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
