| 摘要 |
A method and system for etching an organic layer on a substrate in a plasma processing system comprising: introducing a process gas comprising N<SUB>x</SUB>O<SUB>y</SUB>, wherein x, y represent integers greater than or equal to unity. Additionally, the process chemistry can further comprise the addition of an inert gas, such as a Noble gas (i.e., He, Ne, Ar, Kr, Xe, Rn). The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an organic layer on the thin film; forming a photoresist pattern on the organic layer; and transferring the photoresist pattern to the organic layer with an etch process using a process gas comprising N<SUB>x</SUB>O<SUB>y</SUB>, wherein x, y represent integers greater than or equal to unity.
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