发明名称 Memory access circuit for adjusting delay of internal clock signal used for memory control
摘要 It is to form a memory access circuit comprising a memory, a clock generator for generating a reference clock signal, and a clock delay adjusting circuit for delaying the reference clock signal to create a delay clock signal. The clock delay adjusting circuit is a circuit for generating a plurality of delay clock signals of various delay value. The memory access circuit further comprises a test data generator for generating test data and a memory access test controller for supplying a memory writing test start signal in reply to the external synchronizing signal. The test data generator generates the test data in reply to the memory writing test start signal, writes the test data into the memory in synchronization with the reference clock, and supplies the write data corresponding to the test data in synchronization with the reference clock, and the memory access test controller reads the test data from the memory in synchronization with the delay clock signal, compares the read test data with the write data, and adjusts the memory access timing according to as a result of the comparison.
申请公布号 US2005135167(A1) 申请公布日期 2005.06.23
申请号 US20040950471 申请日期 2004.09.28
申请人 NEC PLASMA DISPLAY CORPORATION 发明人 MANABE TAKASHI
分类号 G11C7/00;G11C7/10;G11C29/50;(IPC1-7):G11C7/00 主分类号 G11C7/00
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