| 摘要 |
<P>PROBLEM TO BE SOLVED: To efficiently perform a process of reforming a film having a low dielectric constant and a process of forming another insulation film having a different film quality on the reformed film having a low dielectric constant. <P>SOLUTION: In a single CVD system, a heater is turned on, 1, 3, 5, 7-tetramethylcyclotetrasiloxane (TMCTS) is introduced, and a baking process is conducted without applying high-frequency voltage to reform a porous film having a low dielectric constant such as a porous silica film. Then, in the same CVD system, the heater is turned on and TMCTS is introduced and plasmas of TMCTS are generated under the application of high-frequency voltage to form an insulation film having a high density and hardness on the porous film having a low dielectric constant. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
