NONVOLATILE SEMICONDUCTOR MEMORY DEVICE FOR PREVENTING HIGH VOLTAGE OF BIT LINE FROM LEAKING

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device for preventing a high voltage applied to a bit line from leaking to a low voltage circuit using a power source voltage to operate at the time of deleting operation.

SOLUTION: The nonvolatile semiconductor memory device includes a high voltage circuit for preventing the high voltage applied to the bit line from leaking to the low voltage circuit using the power source voltage to operate at the time of deleting operation. The high voltage circuit is provided with: a 1st high voltage circuit for selectively and electrically separating the low voltage circuit from the bit line; and a 2nd high voltage circuit which is connected between the low voltage circuit and the 1st high voltage circuit and electrically separates the low voltage circuit from the 1st high voltage circuit, and thereby prevents a leakage current from flowing from the bit line to the low voltage circuit.

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