| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor that has a low saturation voltage between the collector and emitter, has a small size, and can be manufactured by a small number of processes, and to provide a semiconductor device in which the bipolar transistor and a MOS transistor are formed on the same substrate. SOLUTION: A high-concentration region 15 for reducing the saturation voltage VCE (sat) between the collector and emitter is formed so that a base region 13 of an NPN transistor 10 is surrounded. The high-concentration region 15 needs not be formed so deep to reach a buried layer 11, thus reducing lateral expansion. When forming a source region 24 and a drain region 25 of an NMOS transistor 20 formed on the same silicon substrate 30 along with the NPN transistor 10, a high-concentration region 15 can be formed in the same process, thus excluding an exclusive diffusion process for forming the high-concentration region 15, and manufacturing a semiconductor device 1 with a small number of processes. COPYRIGHT: (C)2005,JPO&NCIPI
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