发明名称 SOLID-STATE IMAGE SENSOR
摘要 PROBLEM TO BE SOLVED: To provide a solid-state image sensor having a multi-stage source follower type amplifier, a high gain, and a broad band. SOLUTION: The solid-state image sensor is composed of a three-stage source follower type amplifier. Source follower type amplifiers 210, 220, and 230 at the respective stages are composed of respective n-channel driver transistors D21, D22, and D23 and respective n-channel load transistors L21, L22, and L23. Each drain of the driver transistors D21 to D23 is connected to a power source voltage VDD of about 12V and each back gate (third well region) of the driver transistors D21 to D23 is connected to the source of the driver transistor D23. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005167273(A) 申请公布日期 2005.06.23
申请号 JP20050011901 申请日期 2005.01.19
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MUTO NOBUHIKO
分类号 H01L27/146;H01L21/339;H01L29/762;H04N5/335;H04N5/353;H04N5/359;H04N5/369;H04N5/372;H04N5/378;(IPC1-7):H01L27/146 主分类号 H01L27/146
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