发明名称 CLEANING METHOD FOR SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To perform cleaning which reduces the damage of the members in a substrate treatment vessel due to an F free radical by using the conditions under which the F free radical recombines to form F<SB>2</SB>in cleaning using the F free radical. SOLUTION: The cleaning method for a substrate treatment apparatus comprising cleaning the treatment vessel of the substrate treatment apparatus for treating the substrate to be treated includes a process of exciting a plasma by maintaining the pressure in the treatment vessel under a first pressure while introducing cleaning gas at a first flow rate into a remote plasma generating section installed in the substrate treatment apparatus, and a cleaning process of removing the deposits in the treatment vessel by maintaining the pressure in the treatment vessel under a second pressure higher than the first pressure while introducing the cleaning gas at a second flow rate higher than the first flow rate into the remote plasma generating section. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005163183(A) 申请公布日期 2005.06.23
申请号 JP20040373626 申请日期 2004.12.24
申请人 TOKYO ELECTRON LTD 发明人 YAMAZAKI HIDEAKI;NAKAMURA KAZUHITO;MATSUZAWA OKIAKI;MATSUDA TSUKASA;KOUNO YUMIKO
分类号 C23C16/44;H01L21/3065;H01L21/31;(IPC1-7):C23C16/44;H01L21/306 主分类号 C23C16/44
代理机构 代理人
主权项
地址