发明名称 IMAGING WITH GATE CONTROLLED CHARGE STORAGE
摘要 A pixel cell comprises a photo-conversion device for generating charge and a gate controlled charge storage region for storing photo-generated charge under control of a control gate. The charge storage region can be a single CCD stage having a buried channel to obtain efficient charge transfer and low charge loss. The charge storage region is adjacent to a gate of a transistor. The transistor gate is adjacent to the photo-conversion device and, in conjunction with the control gate, transfers photo-generated charge from the photo-conversion device to the charge storage region.
申请公布号 WO2005022638(A3) 申请公布日期 2005.06.23
申请号 WO2004US26876 申请日期 2004.08.18
申请人 MICRON TECHNOLOGY, INC.;HONG, SUNGKWON, CHRIS 发明人 HONG, SUNGKWON, CHRIS
分类号 H01L27/146;H01L27/148 主分类号 H01L27/146
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