发明名称 |
One-level zero-current-state exclusive or (XOR) gate |
摘要 |
Aspects of the invention provide a fast one level zero-current-state XOR gate. An embodiment of the invention provides a first pair of differentially configured transistors and a level shifting resistor coupled to the first pair of differentially configured transistors. The one level zero-current-state XOR gate may also include a second pair of differentially configured transistors. A core of the XOR gate may be coupled to outputs of the first and the second pairs of differentially configured transistors.
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申请公布号 |
US2005134310(A1) |
申请公布日期 |
2005.06.23 |
申请号 |
US20050057968 |
申请日期 |
2005.02.15 |
申请人 |
YIN GUANGMING |
发明人 |
YIN GUANGMING |
分类号 |
H03D13/00;H03F3/45;H03K19/21;H04L7/033;(IPC1-7):H03K19/21 |
主分类号 |
H03D13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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