发明名称 Conductive memory array having page mode and burst mode read capability
摘要 Conductive memory array having page mode and burst mode read capability. The conductive memory array includes two-terminal memory plugs and sensing circuits configured to read information from the memory plugs in two cycles. The array also includes associated circuitry that allows it to carry out such two-cycle reads in either page mode or burst mode.
申请公布号 US2005135148(A1) 申请公布日期 2005.06.23
申请号 US20030745264 申请日期 2003.12.22
申请人 UNITY SEMICONDUCTOR CORPORATION 发明人 CHEVALLIER CHRISTOPHE J.;RINERSON DARRELL
分类号 G11C7/10;G11C11/00;G11C13/00;(IPC1-7):G11C11/00 主分类号 G11C7/10
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