| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide method and programs for pattern displacement analysis, pattern correction, and stencil mask manufacture which can quickly and accurately correct the position of a pattern aperture by quickly and accurately analyzing the displacement of the pattern aperture. <P>SOLUTION: A thin film is divided into a plurality of elements 10 which are joined together at nodes 11. Then, the force acting on the node 11 of each element 10 caused by the force applied to one pattern aperture 3 included in each element 10 is obtained in accordance with the distance between each node 11 and the pattern aperture 3. Then, the forces acting on the node 11 of each element 10 caused by the forces applied to all pattern apertures 3 included in each element 10 are accumulated. The amount of the displacement of each node 11 is obtained from the difference between the internal stress applied to each node 11 before the pattern aperture 3 exists and the force acting on each node 11 after the accumulation. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
